Toru Tanzawa (Fellow, IEEE) received the B.S. degree in physics from Saitama University, Saitama, Japan, in 1990, the M.S. degree in physics from Tohoku University, Sendai, Japan, in 1992, and the Ph.D. degree in electrical engineering from The University of Tokyo, Tokyo, Japan, in 2002.,In 1992, he joined the Toshiba Research and Development Center, Japan. He had worked on the circuit design of high-density NAND flash memories and high-speed low-voltage NOR flash memories for ten years and on the circuit design of RF-CMOS wireless LSIs for Bluetooth for the following three years. From 2004 to 2017, he was with Micron Japan Ltd., Tokyo, where he worked on MLC NAND flash design at the Japan Flash Design Center. He is currently a Professor with the Faculty of Engineering, Shizuoka University. He has published more than 100 conferences and journals papers. He holds more than 280 U.S. patents. His current research interests include power management circuits and systems, low-voltage analog circuits, and low-power memory circuits, for energy harvesting.